Picture of Etcher ICP-RIE Plasmalab - Oxford Instruments
Current status:
DOWN
Book | Log
Show/Collapse all

1st Responsible:
Process:
You must be logged in to view files.

Inductively coupled plasma reactive ion etching (ICP-RIE) Plasmalab System 100 from Oxford Instruments. Currently the system is used for etching almost all different types of materials including III-V semiconductors, Si, dielectrics and metals. Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones). In total, 6 gases available: SF6, O2, Ar, H2, Cl2, C4F8. Up to 4 inch wafer substrate size. Wafer clamp for 4 inch wafers installed. Room temperature processing. Plasma excitation: ICP (13.56 MHz, up to 2 kW) and RF (13.56 MHz, up to 300 W). Process pressure down to 5 mTorr.

Location: Cluster Tool room Q258, NANO-epitaxy Lab (Cleanroom Level 2).

Tool name:
Etcher ICP-RIE Plasmalab - Oxford Instruments
Area/room:
Nano-epitaxy area
Category:
Plasma processing
Manufacturer:
Oxford Instruments
Model:
Plasmalab 100 System 417 622

Instructors

Licensed Users

You must be logged in to view tool modes.