Inductively coupled plasma reactive ion etching (ICP-RIE) system Apex SLR from Plasma-Therm LLC. The system is designed for Chlorine-based well controlled nanoscale etching and atomic layer etching (ALE) of various materials, mostly III-V semiconductors, but also Si, metals (e.g. Cr) and polymers (resists). Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones). In total, 6 process gases are presently available: Cl2, BCl3, CH4, Ar, O2 and H2. The system is normally configured for clamping 2 inch wafers. Helium back side cooling. Wafer clamps for 4 inch, 6 inch and 8 inch wafers are also available. Substrate temperature control: -40°C to 170°C. Plasma excitation: ICP (2 MHz, 1 kW) and RF (13.56 MHz, 300 W). Process pressure: 3 - 100 mTorr. The system is equipped with an optical emission spectroscopy (OES) system for determining process endpoint.
Location: Cluster Tool room Q258, NANO-epitaxy Lab (Cleanroom Level 2).