The SPTS Delta LPX APM deposits SiO₂ and SiN_x with excellent thickness uniformity on wafers up to 200 mm (8 inch). Users can tune film properties such as refractive index, stress, and stoichiometry. Ammonia-free nitride recipes are also available.

• Process gases: Qualified recipes use SiH₄, N₂O, N₂, H₂, and/or NH₃. SiO₂ recipes commonly use SiH₄/N₂O. Nitride recipes may use NH₃-based or NH₃-free chemistry. Gas selection depends on the recipe; follow its instructions.

• Plasma source: RF plasma with high-frequency power at 13.56 MHz and low-frequency power at 375 kHz. The sources can be used individually or together to control process conditions and film stress.

• Process temperature: The Delta platform supports deposition temperatures from ~150°C to 350°C. Use only the temperature specified by the qualified recipe.

Important: Using paste, grease, oil, or other adhesive materials to secure samples to wafer carriers is prohibited. These materials can outgas during processing and contaminate the chamber.

The tool uses quartz wafer carriers designed and manufactured for 8-inch wafers. For smaller samples, use the appropriate recessed quartz carrier for 2-, 4-, or 6-inch samples.

After deposition, record the recipe name, substrate material, process time, deposition type (SiO₂ or SiN_x), relevant process parameters or observations, and your name and date in the logbook next to the tool.

The stated temperature range and RF frequencies are platform specifications. Available operating conditions depend on the tool configuration and qualified recipes.