Table-top Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology. The system is designed for etching Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry. Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones). In total, 5 gases available: CF4, CHF3, SF6, O2 and Ar. Up to 8 inch wafer substrate size. No wafer clamping. Room temperature processing. Plasma excitation: RF (13.56 MHz, up to 600W). Process pressure down to 10 mTorr.
The system is equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.
Location: EVA room Q158, Nano Process Lab (Cleanroom Level 1).