Main application: Deposition thin high-k oxide layers
Materials: HfO2, ZrO2, Al2O3
8" max wafer diameter
The ALD is equipped with a plasma-head that allows the used of O2 and N2 plasma.
4 precursors currently installed:
- Hafnium (Cp-Hf, Booster).
- Zirconium (Cp-Zr, Booster).
- Water.
- Aluminum (TMA)