Table-top Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology. The system is designed for etching Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry. Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones). In total, 5 gases available: CF4, CHF3, SF6, O2 and Ar. Up to 8 inch wafer substrate size. No wafer clamping. Room temperature processing. Plasma excitation: RF (13.56 MHz, up to 400W). Process pressure down to 10 mTorr.
The system is equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.
Location: EVA room Q158, Nano Process Lab (Cleanroom Level 1).
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Trion RIE etcher has a 7 A fast-blow fuse, which was previously operating very close to its limit at 300 W plasma power (~6.9 A).
The turbo molecular pump (TMP) power supply has now been separated from the main power source, reducing the load on the fuse. The system can now operate at up to 350 W plasma power (~6.5 A).
New power measurements show that:
- The tool consumes approximately 190 W with the TMP running at its maximum frequency, including the PC/PLC.
- The tool consumes approximately 73 W when only the PC/PLC is running, excluding the pumps.
Important: Please do not run any process at 400 W plasma power or higher, as this may exceed the safe current limit and blow the fuse.