Picture of PECVD - MicroSys 200
Current status:
WARNING
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Responsibles
1st Responsible:
Luke Hankin
Process:
Files
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Description
  • Plasma Enhanced CVD system (PECVD)
  • Deposition of SiO2, Si3N4 and a-Si
  • RF power: 0-400 W
  • ICP power: 0-1300 W
  • Temperatures: RT to 300°C
  • Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O
  • He for substrate heat transfer
  • Maximum wafer size: 4"
  • Location: Q258
Details
Tool name:
PECVD - MicroSys 200
Area/room:
Q258: Aixtron CCS
Category:
CVD equipment
Manufacturer:
MiroSystems GmbH
Model:
MS200
Instructors & Licensed Users

Instructors

Licensed Users

Tool Modes
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